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SM-8 BIPOLAR TRANSISTOR H-BRIDGE
ZHB6792
PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating PARTMARKING DETAIL - ZHB6792
SM-8 (8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current SYMBOL V CBO V CEO V EBO I CM IC NPNs 70 70 5 2 1 PNPs -70 -70 -5 -2 -1 UNIT V V V A A C
Operating and Storage Temperature Range T j:T stg
-55 to +150
SCHEMATIC DIAGRAM
E1, E4
CONNECTION DIAGRAM
C1,C2
B1 Q1 Q4 B4
B1 B2 E2,E3 B3
5
E1,E4 C3,C4
6
7
C1, C2 C3, C4 B2 Q2 Q3 B3
B4
E2, E3
8
1
2
3
4
ZHB6792
THERMAL CHARACTERISTICS
PARAMETER Total Power Dissipation at T amb = 25C* Any single transistor "on" Q1 and Q3 "on" or Q2 and Q4 "on" equally Derate above 25C* Any single transistor "on" Q1 and Q3 "on" or Q2 and Q4 "on" equally Thermal Resistance - Junction to Ambient* Any single transistor "on" Q1 and Q3 "on" or Q2 and Q4 "on" equally SYMBOL P tot 1.25 2 10 16 100 62.5 W W mW/ C mW/ C C/ W C/ W VALUE UNIT
100
Thermal Resistance (C/W)
Thermal Resistance (C/W)
t1
80
tP
D=t1 tP
60
t1
50 40 30 20 10 0 100us
tP
D=t1 tP
60 40 20 0 100us
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
D=1 D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse
1ms
10ms 100ms
1s
10s
100s
1ms
10ms 100ms
1s
10s
100s
Pulse Width
Pulse Width
Transient Thermal Resistance Single Transistor "On"
2.0 10
Transient Thermal Resistance Q1 and Q3 or Q2 and Q4 "On"
Max Power Dissipation - (Watts)
1.5
Du al
Power Dissapation (W)
Dual Transistors Single Transistor
1.0
Sin gle
1
Full Copper Minimum Copper
Dual Transistors Single Transistor
0.5
0 0 20 40 60 80 100 120 140 160
0.1 0.1 1 10
T - Temperature (C)
Pcb Area (inches squared)
Derating curve
Pd v Pcb Area Comparison
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. "Two devices on" is the standard operating condition for the bridge. Eg. opposing NPN/PNP pairs rurned on.
ZHB6792
NPN TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER BreakdownVoltages SYMBOL MIN. V (BR)CBO V (BR)CEO V (BR)EBO Cut-Off Currents I CBO I EBO Saturation Voltages V CE(sat) V BE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times V BE(on) h FE 500 400 150 150 200 12 46 1440 MHz pF pF ns ns 70 70 5 0.1 0.1 0.15 0.5 0.9 0.9 TYP. MAX. UNIT TEST CONDITIONS. V V V A A V V V V I C=100A I C=10mA* I E=100A V CB=55V V EB=4V I C=0.1A, I B=0.5mA* I C=1A, I B=10mA* I C=1A, I B=10mA* I C =1A, V CE=2V* I C=100mA,V CE=2V* I C=500mA, V CE =2V* I C=1A,V CE=2V* I C=50mA, V CE=5V, f=50MHz V EB=0.5V, f=1MHz V CB=10V, f=1MHz I C=500mA, I B1=50mA I B2=50mA, V CC=10V
fT C ibo C obo t on t off
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ZHB6792
PNP TRANSISTORS ELECTRICAL CHARACTERISTICS (at Tamb = 25C)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO V CE(sat) V BE(sat) V BE(on) h FE 300 250 200 100 225 22 35 750 -0.75 800 MIN. -75 -70 -5 -0.1 -0.1 -0.45 -0.5 -0.95 TYP. MAX. UNIT V V V A A V V V V CONDITIONS. I C=-100A I C=-10mA* I E=-100A V CB=-40V V EB=-4V I C=-500mA, I B=-5mA* I C=-1A, I B=-25mA* I C=-1A, I B=-25mA* I C =-1A, V CE=-2V* I C=-10mA, V CE=-2V* I C=-500mA, V CE=-2V* I C=-1A, V CE=-2V* MHz pF pF ns ns I C=-50mA, V CE=-5V f=50MHz V EB=-0.5V, f=1MHz V CB=-10V, f=1MHz I C=-500mA, I B1=-50mA I B2=-50mA, V CC=-10V
fT C ibo C obo t on t off
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ZHB6792
PNP TRANSISTOR TYPICAL CHARACTERISTICS
1.8 1.6 1.4
IC/IB=40 IC/IB=20 IC/IB=10
1.8 Tamb=25C 1.6 1.4
-55C +25C +100C +175C
IC/IB=100
VCE(sat) - (Volts)
VCE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6 1.4
+100C +25C -55C
VCE=2V 750
1.6
hFE - Normalised Gain
hFE - Typical Gain
1.4
-55C +25C +100C +175C
IC/IB=40
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10 250 500
VBE(sat) - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55C +25C +100C
VCE=2V
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0.01 0.1 1 10
IC - Collector Current (Amps)
VBE(on) v IC
ZHB6792
NPN TRANSISTOR TYPICAL CHARACTERISTICS
0.8
IC/IB=200 IC/IB=100 IC/IB=10
Tamb=25C 0.8
-55C +25C +100C +175C
IC/IB=100
VCE(sat) - (Volts)
0.6
VCE(sat) - (Volts)
0.01 0.1 1 10
0.6
0.4
0.4
0.2
0.2
0
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
1.6
hFE - Normalised Gain
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0
+100C +25C -55C
VCE=2V 1.5K 1.6
hFE - Typical Gain
VBE(sat) - (Volts)
1.4 1.2 1.0 0.8 0.6 0.4 0.2
-55C +25C +100C +175C
IC/IB=100
1K
500
0.01
0.1
1
10 0 0.01 0.1 1 10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1.6 1.4
-55C +25C +100C +175C
VCE=2V
VBE - (Volts)
1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10
IC - Collector Current (Amps)
VBE(on) v IC
ZHB6792
He E A A1
5
6
b
3
4
e2
7
o
8
45
1
2
e1 c
D
Lp
3
Dim
Millimetres Min Typ - - 0.7 - - - 4.59 1.53 - - Max 1.7 0.1 - 0.32 6.7 3.7 - - 7.3 - Min - 0.0008 - 0.009 0.248 0.130 - - 0.264 0.035
Inches Typ - - 0.028 - - - 0.180 0.060 - - Max 0.067 0.004 - 0.013 0.264 0.145 - - 0.287 -
A A1 b c D E e1 e2 He Lp
- 0.02 - 0.24 6.3 3.3 - - 6.7 0.9
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c)Zetex plc 1998 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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